供应链
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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TRANS NPN 45V 0.5A SOT23-3 / Bipolar (BJT) Transistor NPN 45 V 500 mA 100MHz 310 mW Surface Mount SOT-23-3
描述
由其分销商提供的 onsemi MMBT100 的描述。
MMBT100 Series 45 V CE Breakdown .5 A NPN General Purpose Amplifier - SOT-23
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
400mV@ 20mA,200mA NPN 350mW 6V 50nA 75V 45V 500mA SOT-23-3 2.9mm*1.3mm*1mm
General Purpose Transistors NPN Ic=500mA Vceo=45V hfe=100 P=350mW SOT23
Trans GP BJT NPN 45V 0.5A 350mW 3-Pin SOT-23 T/R
50nA 45V 350mW 500mA 100@150mA5V 250MHz 400mV@200mA20mA NPN -55¡Í~+150¡Í@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10.
TRANSISTOR, BIPOL, NPN, 45V, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 350mW; DC Collector Current: 500mA; DC Current Gain hFE: 80hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)75 V
Collector Emitter Breakdown Voltage75 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)45 V
Current Rating500 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency250 MHz
Gain Bandwidth Product250 MHz
hFE Min100
Max Breakdown Voltage45 V
Max Collector Current500 mA
Max Frequency1 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation350 mW
Schedule B8541210080
Transition Frequency250 MHz
Voltage Rating (DC)45 V
Dimensions
Height1.11 mm
Length2.9 mm
Width1.3 mm