JFET,SWITCH,N CH,40V,SOT-23; Transistor Type:JFET; Breakdown Voltage Vbr:40V; Zero Gate Voltage Drain Current Idss:30µA to 90µA; Gate-Source Cutoff Voltage Vgs(off) Max:1.8V; Power Dissipation Pd:225mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:225mW
This device is designed for low current DC and audio applications. These devices provide excellent performance as input stages for sub-picoamp instrumentation or any high impedance signal sources. Sourced from Process 53.