This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 51. See J111 for characteristics.
TRANSISTOR, JFET, N-CH, -40V, SOT-23-3; Breakdown Voltage Vbr: -40V; Zero Gate Voltage Drain Current Idss Min: -; Zero Gate Voltage Drain Current Idss Max: 30mA; Gate-Source Cutoff Voltage Vgs(off) Max: -10V; Transistor Case
Bipolar Transistor; Power Dissipation, Pd:350mW; Operating Temperature Range:-55°C to +150°C; No. of Pins:3; Current Rating:30mA; Leaded Process Compatible:Yes; Package/Case:TO-92; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes