onsemi MJE5850G

Name: onsemi MJE5850G
Brand: onsemi
SKU: MJE5850G

Transistor, Bipolar, Si, PNP, Power, Vceo 300VDC, IC 8A, Pd 80W, TO-220AB, Hfe 5

$ 2.56

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	MJE5850G	0	1	Bulk	2.840	2.840	2.700	2.560	2.560	2h
element14 APAC	MJE5850G	0	1		4.388*	2.897*	2.467*	2.171*	2.171*	3h
Farnell	MJE5850G	0	1		4.398*	3.959*	3.959*	3.959*	3.959*	21h
Microchip USA	MJE5850G	237	150	Tray				10.400	10.400	3d
Win Source	WS-MJE5850G	20	11				3.121	3.121	3.121	10h

数据表和文档

下载 onsemi MJE5850G 的数据表和制造商文档。

Upverter

Datasheet8 页14 年前

IHS

onsemi

Farnell

element14 APAC

CAD 模型

从我们值得信赖的合作伙伴处下载 onsemi MJE5850G 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
EE Concierge	符号封装
SnapEDA	封装		下载
TraceParts		3D	下载
Ultra Librarian	符号封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1995-07-01

Lifecycle StatusObsolete (Last Updated: 6 days ago)

LTB Date2022-09-29

LTD Date2023-03-29

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)

描述

由其分销商提供的 onsemi MJE5850G 的描述。

TRANSISTOR, BIPOLAR, SI, PNP, POWER, VCEO 300VDC, IC 8A, PD 80W, TO-220AB, HFE 5

RS (Formerly Allied Electronics)

Trans GP BJT PNP 300V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube / TRANS PNP 300V 8A TO220AB

Win Source

Bipolar (Bjt) Single Transistor, Pnp, -300 V, 80 W, -8 A, 15 Rohs Compliant: Yes |Onsemi MJE5850G

Newark

300V 80W 8A PNP TO-220(TO-220-3) Bipolar Transistors - BJT ROHS

Dasenic

8.0 A, 300 V PNP Bipolar Power Transistor

onsemi

Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

IHS

TRANSISTOR, PNP, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -300V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Cu; Available until stocks are exhausted Alternative available

Farnell

The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:

North Star Micro