onsemi MJE3055T

Name: onsemi MJE3055T
Brand: onsemi
SKU: MJE3055T

Tube Through Hole NPN Single Bipolar (BJT) Transistor 20 @ 4A 4V 10A 75W 2MHz

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
Microchip USA	MJE3055T	475	150	Bag				10.790	10.790	2d
Component Stockers USA	MJE3055T	48			0.770	0.660	0.560	0.400	0.400	>1wk
Elcom Components	MJE3055T	34			0.500	0.500	0.500	0.500	0.500	13h
Classic Components	MJE3055T	33								17h
Heisener Electronics	MJE3055T	59,804								4d

数据表和文档

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Upverter

Datasheet4 页18 年前

onsemi

IHS

RS (Formerly Allied Electronics)

B+D Enterprises

CAD 模型

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供应链

Country of OriginUSA

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1991-05-01

Lifecycle StatusObsolete (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi MJE3055T 的描述。

Tube Through Hole NPN Single Bipolar (BJT) Transistor 20 @ 4A 4V 10A 75W 2MHz

Fly-Wing Technology

Bipolar Power Transistor, NPN, 10 A, 60 V, 75 Watt

onsemi

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

IHS

Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation:75W; C-E Breakdown Voltage:60V; DC Current Gain Min (hfe):5; Collector Current:10A; Package/Case:TO-220AB; DC Current Gain Max (hfe):100 RoHS Compliant: No

Newark