供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi MJE170G 的描述。
3.0 A PNP Bipolar Power Transistor 40 V
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT 3A 40V 12.5W PNP
Trans GP BJT PNP 40V 3A 1500mW 3-Pin(3+Tab) TO-225 Box
TRANSISTOR, PNP, -40V, -3A, TO-225; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 12.5W; DC Collector Current: -3A; DC Current Gain hFE: 12hFE; Transis
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-225
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage1.7 V
Collector Emitter Voltage (VCEO)40 V
Current Rating2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Frequency50 MHz
Gain Bandwidth Product50 MHz
hFE Min12
Max Collector Current3 A
Max Frequency50 MHz
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityPNP
Power Dissipation12.5 W
Schedule B8541290080
Transition Frequency50 MHz
Voltage Rating (DC)-40 V
Dimensions
Height6.35 mm
Length6.35 mm
Width6.35 mm