onsemi MJD5731T4G

Name: onsemi MJD5731T4G
Brand: onsemi
SKU: MJD5731T4G

1.0 A, 350 V High Voltage PNP Bipolar Power Transistor

$ 0.31

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Distributor		SKU		Min	Pkg
DigiKey	3	MJD5731T4GOSCT-ND	11,314	1	Cut Tape	1.170	0.730	0.478	0.335	0.335
Future Electronics		MJD5731T4G	2,500	2500	Tape & Reel					0.245
Verical	2	MJD5731T4G	713	6			0.617	0.425	0.303	0.233
Arrow Electronics		MJD5731T4G	713	1		0.904	0.617	0.425	0.344	0.344
Rochester Electronics		MJD5731T4G	5,241					0.311	0.258	0.230	11h

数据表和文档

下载 onsemi MJD5731T4G 的数据表和制造商文档。

element14 APAC

Datasheet5 页12 年前

IHS

onsemi

Farnell

Future Electronics

库存历史记录

3 个月趋势:

-27.08%

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供应链

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi MJD5731T4G 的描述。

1.0 A, 350 V High Voltage PNP Bipolar Power Transistor

onsemi

Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

IHS

Trans GP BJT PNP 350V 1A 1560mW 3-Pin(2+Tab) DPAK T/R / TRANS PNP 350V 1A DPAK

Win Source

MJD Series 350 V 1 A PNP Surface Mount Silicon Power Transistor TO-252-3

Future Electronics

Bipolar Transistors - BJT 1A 350V 15W PNP

Digi-ic_SMART PIONEER

1V@ 200mA,1A PNP 1.56W 5V 100¦ÌA 5V 350V 1A TO-252 6.73mm*6.22mm*2.38mm

UnikeyIC

TRANSISTOR, BIPOL, PNP, 350V; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -350V; Transition Frequency ft: 10MHz; Power Dissipation Pd: 15W; DC Collector Current: -1A; DC Current Gain hFE: 10hFE; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MJxxxx Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

Farnell