onsemi MJD253-1G

Name: onsemi MJD253-1G
Brand: onsemi
SKU: MJD253-1G

TRANS PNP 100V 4A IPAK / Bipolar (BJT) Transistor PNP 100 V 4 A 40MHz 1.4 W Through Hole I-PAK

$ 0.398

EOL

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Avnet		MJD253-1G	21,750	5K						0.156	5h
Verical	5	MJD253-1G	1,875	1676						0.200
Rochester Electronics		MJD253-1G	16,408					0.216	0.179	0.160	3h
DigiKey		MJD253-1GOS-ND	257	1	Tube	1.200	1.200	0.517	0.459	0.459
Flip Electronics		MJD253-1G	10,875								4d

数据表和文档

下载 onsemi MJD253-1G 的数据表和制造商文档。

IHS

Datasheet9 页9 年前

Upverter

onsemi

RS (Formerly Allied Electronics)

Newark

库存历史记录

3 个月趋势:

-0.01%

CAD 模型

从我们值得信赖的合作伙伴处下载 onsemi MJD253-1G 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
EE Concierge	符号封装

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-04-13

Lifecycle StatusEOL (Last Updated: 1 day ago)

LTB Date2023-06-15

LTD Date2023-12-15

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)

描述

由其分销商提供的 onsemi MJD253-1G 的描述。

TRANS PNP 100V 4A IPAK / Bipolar (BJT) Transistor PNP 100 V 4 A 40MHz 1.4 W Through Hole I-PAK

Win Source

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

IHS

4.0 A, 100 V PNP Bipolar Power Transistor

onsemi

ON SEMI MJD253-1G PNP BIPOLAR TRANSISTOR, 4 A, 100 V, 3-PIN IPAK

RS (Formerly Allied Electronics)

Trans GP BJT PNP 100V 4A 1400mW 3-Pin(3+Tab) IPAK Tube

Verical

600mV@ 100mA,1A PNP 1.4W 7V 100nA 100V 100V 4A TO-251 6.73mm*6.22mm*2.38mm

UnikeyIC

Power Transistor, Pnp, -100V, I-Pak; Transistor Polarity:Pnp; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:12.5W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Qualification:- Rohs Compliant: Yes |Onsemi MJD253-1G

Newark