供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-12-04
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
onsemiFJNS3202RTA
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
onsemiFJN3302RTA
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
onsemiFJN3304RBU
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
描述
由其分销商提供的 onsemi KSC945YTA 的描述。
Bipolar (BJT) Single Transistor, NPN, 50 V, 300 MHz, 250 mW, 150 mA, 120
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Bipolar Transistors - BJT NPN Epitaxial Transistor
Trans GP BJT NPN 50V 0.15A 250mW 3-Pin TO-92 Fan-Fold
TRANSISTOR, BIPOL, NPN, 50V, TO-92-3
50V 250mW 150mA 120@1mA6V 300MHz 150mV@100mA10mA NPN +150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, NPN, 50V, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 250mW; DC Collector Current: 150mA; DC Current Gain hFE: 120hFE; T
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-92-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight240 mg
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage150 mV
Collector Emitter Voltage (VCEO)50 V
Current Rating150 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min120
Max Breakdown Voltage50 V
Max Collector Current150 mA
Max Frequency1 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation250 mW
Schedule B8541210080
Transition Frequency300 MHz
Voltage Rating (DC)50 V
Dimensions
Height8.77 mm
Length4.58 mm
Width3.86 mm