价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | KSC5502DTM | 7,500 | 2500 | 5h | ||||||||
| Newark | KSC5502DTM | 5,800 | 1 | Cut Tape | ||||||||
| Verical | KSC5502DTM | 10,000 | 200 | |||||||||
| Arrow Electronics | KSC5502DTM | 1,674 | 1 | |||||||||
| Master Electronics | KSC5502DTM | 10,000 | 100 |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-12-28
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi KSC5502DTM 的描述。
Bipolar (BJT) Single Transistor, High Voltage, NPN, 600 V, 2 A, 50 W, TO-252 (DPAK), Surface Mount
KSC Series NPN 50 W 600 V 2 A SMT High Voltage Silicon Transistor - TO-252-3
600V 50W 4@1A,1V 2A NPN TO-252 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 2A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin
Trans GP BJT NPN 600V 2A 3-Pin (2+Tab) DPAK T/R
NPN Triple Diffused Planar Silicon Transistor
TRANSISTOR, NPN, 600V, 2A, TO252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:600V; Transition Frequency Typ ft:11MHz; Power Dissipation Pd:50W; DC Collector Current:2A; DC Current Gain hFE:15; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Collector Base Voltage (VCBO)1.2 kV
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)600 V
Current Rating2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)12 V
Frequency11 MHz
Gain Bandwidth Product11 MHz
hFE Min4
Max Breakdown Voltage600 V
Max Collector Current2 A
Max Frequency11 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingTape & Reel
PolarityNPN
Power Dissipation87.83 W
Schedule B8541290080
Transition Frequency11 MHz
Voltage Rating (DC)600 V
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm