供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2001-06-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-02-23
LTD Date2012-08-23
描述
由其分销商提供的 onsemi KSB564ACYTA 的描述。
Bipolar (BJT) Transistor PNP 25V 1A 110MHz 800mW Through Hole TO-92-3
Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
SMALL SIGNAL BIPOLAR TRANSISTOR
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-92-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight240 mg
Technical
Collector Base Voltage (VCBO)-30 V
Collector Emitter Breakdown Voltage25 V
Collector Emitter Saturation Voltage-500 mV
Collector Emitter Voltage (VCEO)25 V
Current Rating-1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency110 MHz
Gain Bandwidth Product110 MHz
hFE Min120
Max Collector Current1 A
Max Operating Temperature150 °C
Max Power Dissipation800 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation800 mW
Transition Frequency110 MHz
Voltage Rating (DC)-25 V