供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-08-21
Lifecycle StatusProduction (Last Updated: 2 months ago)
LTB Date2008-03-11
LTD Date2008-09-11
相关零件
STMicroelectronicsSTGP5H60DF
TRENCH GATE FIELD-STOP IGBT, H S / IGBT Trench Field Stop 600 V 10 A 88 W Through Hole TO-220
onsemiSGS5N60RUFDTU
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220AB
描述
由其分销商提供的 onsemi ISL9V2040P3 的描述。
TO-220AB, SINGLE, N-CH, 400V, 200MJ ECOSPARK IGNITION IGBT
Insulated Gate Bipolar Transistor, 10A I(C), 390V V(BR)CES, N-Channel, TO-220AB
IGBT 430V 10A 130W TO220AB
IGBTs Sgl, N-Ch, 400V
N-CHANNEL IGBT
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Saturation Voltage2.3 V
Collector Emitter Voltage (VCEO)390 V
Current Rating10 A
Element ConfigurationSingle
Max Collector Current10 A
Max Operating Temperature175 °C
Max Power Dissipation130 W
Min Operating Temperature-40 °C
Number of Elements1
Number of Outputs1
Operating Supply Voltage400 V
Power Dissipation130 W
Rise Time2.17 µs
Voltage Rating (DC)400 V