onsemi ISL9R860S3ST

Name: onsemi ISL9R860S3ST
Brand: onsemi
SKU: ISL9R860S3ST

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Farnell	2	ISL9R860S3ST	0	1	Cut Tape	1.786*	1.404*	1.054*	0.706*	0.706*	16h
Microchip USA		ISL9R860S3ST	323	150	Tray				15.210	15.210	11h
Component Stockers USA		ISL9R860S3ST	7			0.740	0.740	0.740	0.740	0.740	2d
Win Source		WS-ISL9R860S3ST	2,090	6			10.010	6.673	6.673	6.673	18h
Worldway Electronics		ISL9R860S3ST	6,053	7	Tape & Reel		1.802	1.716	1.716	1.716	16h

数据表和文档

下载 onsemi ISL9R860S3ST 的数据表和制造商文档。

IHS

Datasheet11 页4 年前

Datasheet8 页16 年前

Future Electronics

onsemi

_legacy Avnet

element14 APAC

CAD 模型

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.10.00.80

Introduction Date2001-11-19

Lifecycle StatusObsolete (Last Updated: 5 days ago)

LTB Date2021-10-08

LTD Date2022-04-08

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)

描述

由其分销商提供的 onsemi ISL9R860S3ST 的描述。

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB

IHS

Rectifier Diode Switching 600V 8A 30ns 3-Pin(2+Tab) D2PAK T/R

Verical

DIODE, ULTRAFAST, 8A, 600V; Diode Type:Stealth Diode; Voltage, Vrrm:600V; Current, If AV:8A; Voltage, Vf Max:2.4V; Termination Type:SMD; Case Style:TO-263AB; SVHC:Cobalt dichloride; Current, Ifs Max:100A; Forward Voltage:2V; Max Reverse RecoveryTime, trr:18ns; Current, Ifrm:16A; SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)

Farnell

The ISL9R860S3ST is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.

Fairchild Semiconductor