onsemi ISL9R18120G2

Rectifier Diode, 1 Phase, 1 Element, 18A, 1200V V(RRM), Silicon, TO-247

Diode Switching 1.2KV 15A 2-Pin(2+Tab) TO-247 Tube

TO-247, SINGLE, 1200V 18A HFST ULTRASOFT RECTIFIER

Single 18A 100Ã×A@1.2kV 2.7V@18A 1.2kV TO-247-2 Diodes - General Purpose ROHS

DIODE FAST REC 1.2KV 18A TO247

Diodes - General Purpose, Power, Switching 18A 1200V Stealt

DIODE GEN PURP 1200V 18A TO247-2

DIODE, FAST, 18A, 1200V, TO-247; Diode Type:Fast Recovery; Voltage, Vrrm:1200V; Current, If AV:18A; Current, Ifsm:200A; Time, trr Typ:38ns; Voltage, Vf Max:3.3V; Temperature, Tj Max:150°C; Termination Type:Through Hole; Case Style:TO-247; No. of Pins:2; Current, Ifs Max:200A; Forward Voltage:3.3V; Time, trr Max:70ns; Current, Ifrm:36A

The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth<SUP><FONT SIZE="-1">TM</FONT></SUP> diodes optimized for low loss performance in high frequency hard switched applications. The Stealth<SUP><FONT SIZE="-1">TM</FONT></SUP> family exhibits low reverse recovery current (I_RM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low I_RM(REC) and short t_a phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth<SUP><FONT SIZE="-1">TM</FONT></SUP> diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49414.