供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-01-01
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2009-03-09
LTD Date2009-09-09
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STP12NM50FP N-channel MOSFET Transistor, 12 A, 500 V, 3-Pin TO-220FP
描述
由其分销商提供的 onsemi IRFS350A 的描述。
Trans MOSFET N-CH 400V 11.5A 3-Pin(3+Tab) TO-3PF Rail
Power Field-Effect Transistor, 11.5A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs 400V N-Channel A-FET
92W(Tc) 4V@ 250µA 131nC@ 10V 1individualNChannel 400V 300mΩ@ 5.75A,10V 2.78pF@25V TO-3PF Through hole mounting
Field Effect Tube (MOSFET)
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
FAIRCHILD TO-3PF
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)11.5 A
Current Rating11.5 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance300 mΩ
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.78 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation92 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation92 W
Rds On Max300 mΩ
Rise Time22 ns
Turn-Off Delay Time100 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)400 V
Dimensions
Height29.9 mm