描述
由其分销商提供的 onsemi IRF710B 的描述。
Trans MOSFET N-CH 400V 2A 3-Pin(3+Tab) TO-220 Rail
Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-CH/400V/2A/3.6OHM/Substitute of IRF710 & IRF710A
36W 30V 7.7nC@ 10V 1individualNChannel 400V 3.4Ω@ 10V 22A 250pF@ 25V TO-220 Through hole mounting 10.67mm*4.7mm*16.3mm
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220
Number of Terminals3
Technical
Continuous Drain Current (ID)2 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance3.4 Ω
Drain to Source Voltage (Vds)400 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation36 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation36 W
Rise Time25 ns
Turn-Off Delay Time20 ns
Turn-On Delay Time6 ns
Dimensions
Height18.95 mm