供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-10-11
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
STMicroelectronicsSTW120NF10
N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in TO-247 package
描述
由其分销商提供的 onsemi HUF75652G3 的描述。
Transistor MOSFET N-Channel 100 Volt 75A 3-Pin(3+Tab) TO-247
N-Channel UltraFET® Power MOSFET 100V, 75A, 8mΩ
N-Channel 100 V 0.008 O Flange Mount UltraFET Power Mosfet - TO-247
Power Field-Effect Transistor, 75A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time190 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.585 nF
Max Operating Temperature175 °C
Max Power Dissipation515 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
Power Dissipation515 W
Rds On Max8 mΩ
Resistance8 mΩ
Rise Time195 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time80 ns
Turn-On Delay Time18.5 ns
Voltage Rating (DC)100 V
Dimensions
Height20.82 mm
Length15.87 mm
Width4.82 mm