onsemi HGTP7N60C3D

Name: onsemi HGTP7N60C3D
Brand: onsemi
SKU: HGTP7N60C3D

Trans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220AB Rail

Obsolete

数据表

价格与库存

授权分销商

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Distributor	SKU		Min
Farnell	HGTP7N60C3D..	0	1	2.321*	2.321*	2.321*	2.321*	2.321*	7h
Component Stockers USA	HGTP7N60C3D	536		1.450	1.420	1.370	1.330	1.330	1d
Win Source	WS-HGTP7N60C3D	6,920	90			0.672	0.448	0.448	22h
SHENGYU ELECTRONICS	HGTP7N60C3D	11,138	1	0.153	0.150	0.150	0.140	0.130	3d
Fly-Wing Technology	HGTP7N60C3D	2,400		0.553	0.454	0.440	0.411	0.411	2d

数据表和文档

下载 onsemi HGTP7N60C3D 的数据表和制造商文档。

Farnell

Datasheet0 页0 年前

Upverter

DigiKey

Arrow Electronics

element14

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-05-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2013-09-11

LTD Date2014-03-11

描述

由其分销商提供的 onsemi HGTP7N60C3D 的描述。

Trans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220AB Rail

Verical

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Onlinecomponents.com

Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB

IHS

IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:14A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:60W; Package/Case:TO-220AB ;RoHS Compliant: Yes

Newark

IGBT, 600V, 14A, TO-220; DC Collector Current: 14A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220AB; No. of Pins: 3Pins;

Farnell