Collector Current Max. mA = 100 / Power Dissipation (Pd) mW = 100 / Reverse Voltage (Vr) V = 5 / Package Type = DIP-6 / Forward Voltage (Vf) Max. V = 1.75 / Output Type = Transistor / Isolation Voltage kV = 7.5 / Forward Current (If) Max. mA = 60 / Operating Temperature Max. °C = 100 / Operating Temperature Min. °C = -40 / Channels = 1
The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.