供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-12-16
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
描述
由其分销商提供的 onsemi FQU4N50TU-WS 的描述。
Power MOSFET, N-Channel, QFET®, 500 V, 2.6 A, 2.7 Ω, IPAK
Single N-Channel 500 V 2.7 Ohm 13 nC 2.5 W DMOS Through Hole Mosfet - TO-251
Power Field-Effect Transistor, 2.6A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight343.08 mg
Technical
Continuous Drain Current (ID)2.6 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance2.7 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance460 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingRail/Tube
Power Dissipation2.5 W
Rds On Max2.7 Ω
Rise Time45 ns
Turn-Off Delay Time20 ns
Turn-On Delay Time12 ns