onsemi FQPF9N50CT

N-Channel QFET® MOSFET 500V, 9A, 800mΩ

44W(Tc) 4V@ 250¦ÌA 35nC@ 10V 1N 500V 800m¦¸@ 4.5A,10V 1.03pF@25V TO-220F

Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.