供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-12-07
Lifecycle StatusObsolete (Last Updated: 6 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)
相关零件
onsemiFQPF9N50YDTU
50W(Tc) 5V@ 250¦ÌA 36nC@ 10V 1N 500V 730m¦¸@ 2.65A,10V 1.45pF@25V TO-220F-3,Y-FORMING
描述
由其分销商提供的 onsemi FQPF7N60 的描述。
Power MOSFET, N-Channel, QFET®, 600 V, 7.4 A, 1 Ω, TO-220F
Trans MOSFET N-CH 600V 4.3A 3-Pin(3+Tab) TO-220FP Tube
MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:4.3A; Resistance, Rds On:1ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Temperature, Operating Range:-55°C to +150°C; Current, Idm Pulse:17.2A; Power Dissipation:48W; Power, Pd:48W; Transistors, No. of:1; Voltage, Vds Max:600V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)4.3 A
Current Rating4.3 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.43 nF
Max Operating Temperature150 °C
Max Power Dissipation48 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation48 W
Rds On Max1 Ω
Rise Time80 ns
Turn-Off Delay Time65 ns
Turn-On Delay Time30 ns
Voltage Rating (DC)600 V