供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-19
Lifecycle StatusObsolete (Last Updated: 6 days ago)
LTB Date2023-09-30
LTD Date2024-03-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)
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描述
由其分销商提供的 onsemi FQPF70N10 的描述。
Power MOSFET, N-Channel, QFET®, 100 V, 35 A, 23 mΩ, TO-220F
N-Channel 100 V 0.023 Ohm Flange Mount Power Mosfet - TO-220-3
MOSFET, N-CH, 100V, 35A, 175DEG C, 62W; Available until stocks are exhausted
Mosfet, N-Ch, 100V, 35A, 175Deg C, 62W Rohs Compliant: Yes |Onsemi FQPF70N10
100V N-CHANNEL MOSFET Power Field-Effect Transistor, 35A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)35 A
Current Rating35 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vds)100 V
Element ConfigurationSingle
Fall Time160 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance3.3 nF
Max Operating Temperature175 °C
Max Power Dissipation62 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation62 W
Rds On Max23 mΩ
Resistance23 MΩ
Rise Time470 ns
Schedule B8541290080
Turn-Off Delay Time130 ns
Turn-On Delay Time30 ns
Voltage Rating (DC)100 V
Dimensions
Height9.19 mm
Length10.16 mm
Width4.7 mm