供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-12-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-06-06
LTD Date2008-12-06
相关零件
STMicroelectronicsSTF2LN60K3
N-channel 600 V, 4 Ohm typ., 2 A, SuperMESH3(TM) Power MOSFET in TO-220FP package
描述
由其分销商提供的 onsemi FQPF4N60 的描述。
MOSFET N-CH 600V 2.6A TO-220F
Power Field-Effect Transistor, 2.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-CHANNEL POWER MOSFET
MOSFETs 600V N-Channel QFET
MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:2.6A; Resistance, Rds On:2.2ohm; Case Style:TO-220F; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:10.4A; Power Dissipation:36W; Power, Pd:36W; Transistors, No. of:1; Voltage, Vds Max:600V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)2.6 A
Current Rating2.6 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance2.2 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance670 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation36 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation36 W
Rds On Max2.2 Ω
Rise Time45 ns
Turn-Off Delay Time25 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)600 V