供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 8 months ago)
相关零件
InfineonBUZ73ALHXKSA1
MOSFET N-CH 200V 5.5A TO220-3 N-Channel 200 V 5.5A (Tc) 40W (Tc) Through Hole PG-TO220-3
描述
由其分销商提供的 onsemi FQPF4N20 的描述。
Trans MOSFET N-CH 200V 2.8A 3-Pin(3+Tab) TO-220F Rail
MOSFET N-CH 200V 2.8A TO-220F
Power Field-Effect Transistor, 2.8A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
27W(Tc) 5V@ 250µA 6.5nC@ 10V 1individualNChannel 200V 1.4Ω@ 1.4A,10V 220pF@25V TO-220F Through hole mounting
N-CHANNEL POWER MOSFET
MOSFETs 200V N-Channel QFET
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)2.8 A
Current Rating2.8 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance1.4 Ω
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance220 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation27 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation27 W
Rds On Max1.4 Ω
Rise Time50 ns
Turn-Off Delay Time7 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)200 V
Dimensions
Height19.4 mm