供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-12-07
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
相关零件
InfineonIRFI530NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.11Ohm;ID 12A;TO-220 Full-Pak;PD 41W;-55de
InfineonIRLI530NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.1Ohm;ID 12A;TO-220 Full-Pak;PD 41W;-55deg
描述
由其分销商提供的 onsemi FQPF22P10 的描述。
Power MOSFET, P-Channel, QFET®, -100 V, -13.2 A, 125 mΩ, TO-220F
Trans MOSFET P-CH 100V 13.2A 3-Pin(3+Tab) TO-220FP Tube
Power Field-Effect Transistor, 13.2A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, P-CH, -100V, -13.2A, TO-220F-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -13.2A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.096ohm; Rds(on) Tes; Available until stocks are exhausted
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)13.2 A
Current Rating-13.2 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance125 mΩ
Drain to Source Voltage (Vdss)-100 V
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.5 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation45 W
Rds On Max125 mΩ
Rise Time170 ns
Schedule B8541290080
Turn-Off Delay Time60 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)-100 V
Dimensions
Height19.5 mm
Length10.36 mm
Width4.9 mm