onsemi FQP8N60C

Power MOSFET, N-Channel, QFET®, 600 V, 7.5 A, 1.2 Ω, TO-220

Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220AB Rail

147W(Tc) 30V 4V@ 250¦ÌA 36nC@ 10 V 1N 600V 1.2¦¸@ 3.75A,10V 7.5A 1.255nF@25V TO-220-3 9.4mm

Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd:

Mosfet, N, To-220; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:7.5A; Tensión Drenaje-Fuente Vds:600V; Resistencia De Activación Rds(On):1Ohm; Tensión Vgs De Medición Rds(On):10V; Tensión Umbral Vgs:4V |Onsemi FQP8N60C.

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.