onsemi FQP65N06

Name: onsemi FQP65N06
Brand: onsemi
SKU: FQP65N06

Power MOSFET, N-Channel, QFET®, 60 V, 65 A, 16 mΩ, TO-220

$ 1.16

EOL

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	FQP65N06	0	50	Bulk			1.160	1.160	1.160	20h
element14 APAC	FQP65N06	0	1		2.686*	2.125*	1.801*	1.319*	1.256*	17h
Farnell	FQP65N06	0	1		1.852*	1.471*	1.185*	0.972*	0.972*	1d
Worldway Electronics	FQP65N06	7,476	7	Tube		0.374	0.363	0.344	0.344	3h
Shenzhen Glow Technology Co., Ltd	2050042	联系方式	10			2.440	2.196	1.976	1.976	>1w

数据表和文档

下载 onsemi FQP65N06 的数据表和制造商文档。

IHS

Datasheet8 页12 年前

Datasheet0 页0 年前

Factory Futures

onsemi

element14 APAC

Farnell

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-07-07

Lifecycle StatusEOL (Last Updated: 3 days ago)

LTB Date2022-12-30

LTD Date2023-06-30

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

描述

由其分销商提供的 onsemi FQP65N06 的描述。

Power MOSFET, N-Channel, QFET®, 60 V, 65 A, 16 mΩ, TO-220

onsemi

TRANSISTOR, N-CHANNEL, QFET MOSFET, 60V, 65A, 16 MOHM AT VGS 10V, TO-220

RS (Formerly Allied Electronics)

60V N-CHANNEL MOSFET Power Field-Effect Transistor, 65A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:60V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:65A; Device Marking:FQP65N06; On State Resistance Max:16mohm; Package / Case:TO-220; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:260A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Fairchild Semiconductor