供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2013-12-27
Lifecycle StatusEOL (Last Updated: 6 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
相关零件
VishaySIHF6N40D-E3
MOSFET, N-CH, 400V, 6A, TO-220FP; Transistor Polarity:N Channel; Continuous Drai
VishaySIHP6N40D-E3
Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
描述
由其分销商提供的 onsemi FQP2P40-F080 的描述。
Power MOSFET, P-Channel, QFET®, -400 V, -2.0 A, 6.5 Ω, TO-220
Trans MOSFET P-CH 400V 2A 3-Pin(3+Tab) TO-220 Tube
Power Field-Effect Transistor, 2A I(D), 400V, 6.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are wellsuited for electronic lamp ballast based on complimentary half bridge.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)2 A
Drain to Source Breakdown Voltage-400 V
Drain to Source Resistance6.5 Ω
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance350 pF
Max Operating Temperature150 °C
Max Power Dissipation63 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max6.5 Ω
Rise Time75 ns
Turn-Off Delay Time55 ns
Turn-On Delay Time30 ns