onsemi FQP17P06

Name: onsemi FQP17P06
Brand: onsemi
SKU: FQP17P06

P-Channel Power MOSFET, QFET®, -60 V, -17 A, 120 mΩ, TO-220

$ 0.88

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Distributor		SKU		Min	Pkg
Avnet		FQP17P06	138,831	50				0.878	0.784	0.784	2d
Newark	2	FQP17P06	5,009	1		3.010	1.580	1.410	1.220	1.220
Verical	2	FQP17P06	4,550	50				1.482	0.974	0.939
Future Electronics		FQP17P06	15,094	25	Tube			0.920	0.880	0.835
Master Electronics		FQP17P06	4,550	50				1.259	0.828	0.761

数据表和文档

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Upverter

Technical Drawing1 页6 年前

IHS

Fairchild Semiconductor

element14 APAC

onsemi

库存历史记录

3 个月趋势:

+34.42%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-10-19

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FQP17P06 的描述。

P-Channel Power MOSFET, QFET®, -60 V, -17 A, 120 mΩ, TO-220

onsemi

Power Field-Effect Transistor, 17A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Fairchild Semiconductor

MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:60V; On Resistance Rds(on):120mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:79W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:-17A; Current Temperature:25°C; Device Marking:FQP17P06; External Depth:29.03mm; External Length / Height:4.5mm; External Width:9.9mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:120mohm; Package / Case:TO-220; Power Dissipation Pd:79W; Power Dissipation Pd:79W; Pulse Current Idm:68A; Termination Type:Through Hole; Voltage Vds Typ:-60V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-4V

element14 APAC