供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-06-20
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
描述
由其分销商提供的 onsemi FQP17N40 的描述。
N-Channel Power MOSFET, QFET®, 400 V, 16 A, 270 mΩ, TO-220
N-Channel 400 V 0.27 Ohm Through Hole Mosfet - TO-220
Power Field-Effect Transistor, 16A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:400V; Current, Id Cont:16A; Resistance, Rds On:0.27ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)16 A
Current Rating16 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance270 mΩ
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time105 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.3 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation170 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
Power Dissipation170 W
Rds On Max270 mΩ
Resistance270 mΩ
Rise Time185 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time90 ns
Turn-On Delay Time40 ns
Voltage Rating (DC)400 V
Dimensions
Height20.4 mm
Length10.1 mm
Width4.7 mm