价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | FQD2P40TF | 195 | 7h | |||||||||
| Avnet | FQD2P40TF | 0 | 2K | 9h | ||||||||
| Component Stockers USA | FQD2P40TF | 226 | 21h | |||||||||
| Worldway Electronics | FQD2P40TF | 15,783 | 7 | Tape & Reel | 7h | |||||||
| Win Source | WS-FQD2P40TF | 1,530 | 1 | 8h |
相关零件
描述
由其分销商提供的 onsemi FQD2P40TF 的描述。
P-Channel QFET® MOSFET -400V, -1.56A, 6.5Ω
TRANS MOSFET P-CH 400V 1.56A 3PIN DPAK
TAPE REEL \ P-CH/400V/1.56A/6.5OHM
Power Field-Effect Transistor, 1.56A I(D), 400V, 6.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)1.56 A
Current18 A
Current Rating-1.56 A
Drain to Source Breakdown Voltage-400 V
Drain to Source Resistance6.5 Ω
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance350 pF
Max Operating Temperature150 °C
Max Power Dissipation38 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max6.5 Ω
Rise Time33 ns
Turn-Off Delay Time22 ns
Voltage400 V
Voltage Rating (DC)-400 V