onsemi FQB47P06TM-AM002

Name: onsemi FQB47P06TM-AM002
Brand: onsemi
SKU: FQB47P06TM-AM002

P-Channel Power MOSFET, QFET®, -60 V, -47 A, 26 mΩ, D2PAK

$ 1.716

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Distributor		SKU		Min	Pkg
Newark	3	FQB47P06TM-AM002	1,921	1	Cut Tape	5.300	3.730	3.730	3.730	3.730
Verical	2	FQB47P06TM_AM002	750	6			1.308	1.216	1.135	1.135
Arrow Electronics	2	FQB47P06TM-AM002	750	1		1.382	1.308	1.216	1.135	1.135
DigiKey	3	FQB47P06TM-AM002CT-ND	689	1	Cut Tape	4.980	3.293	2.336	2.336	2.336
Onlinecomponents.com		FQB47P06TM-AM002	0	10	Bulk		1.980	1.820	1.640	1.600

数据表和文档

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Newark

Datasheet9 页4 年前

Datasheet0 页0 年前

Upverter

Future Electronics

Factory Futures

onsemi

库存历史记录

3 个月趋势:

-5.61%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-10-19

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FQB47P06TM-AM002 的描述。

P-Channel Power MOSFET, QFET®, -60 V, -47 A, 26 mΩ, D2PAK

onsemi

FQB47P06 Series -60 V -47 A 0.026 Ohm SMT P-Channel QFET Mosfet - D2PAK-3

Future Electronics

Power MOSFET, P Channel, 60 V, 47 A, 0.026 ohm, TO-263 (D2PAK), Surface Mount

EBV Elektronik

Trans MOSFET P-CH 60V 47A 3-Pin(2+Tab) D2PAK T/R

Avnet

Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

MOSFET, P, SMD, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):26mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:160W; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:-47A; Package / Case:D2-PAK; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulse Current Idm:188A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

Mosfet, -60V, -47A, D2-Pak; Transistor, Polaridad:Canal P; Intensidad Drenador Continua Id:-47A; Tensión Drenaje-Fuente Vds:-60V; Resistencia De Activación Rds(On):26Mohm; Tensión Vgs De Medición Rds(On):-10V; Tensión Umbral Vgs:-4V |Onsemi FQB47P06TM_AM002

Newark

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Fairchild Semiconductor