供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-05-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
InfineonIRFB4228PBF
150V Single N-Channel PDP Switch HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
描述
由其分销商提供的 onsemi FQA70N15 的描述。
N-Channel Power MOSFET, QFET®, 150V, 70A, 28mΩ, TO-3P
Trans MOSFET N-CH 150V 70A 3-Pin(3+Tab) TO-3P(N) Rail
Avnet Japan
N-Channel 150V 70A (Tc) 330W (Tc) Through Hole TO-3PN MOSFET
Power Field-Effect Transistor, 70A I(D), 150V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
POWER FIELD-EFFECT TRANSISTOR, 7
MOSFET, N-CH, 150V, 70A, TO-3PN-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.023ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Po
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Continuous Drain Current (ID)70 A
Current Rating70 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance28 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time290 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance5.4 nF
Max Operating Temperature175 °C
Max Power Dissipation330 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation330 W
Rds On Max28 mΩ
Rise Time420 ns
Threshold Voltage4 V
Turn-Off Delay Time340 ns
Turn-On Delay Time60 ns
Voltage Rating (DC)150 V
Dimensions
Height18.9 mm
Length15.8 mm
Width5 mm