onsemi FQA19N60

N-Channel Power MOSFET, QFET®, 600 V, 18.5 A, 380 mΩ, TO-3P

Transistor FQA19N60 N-Channel QFET MOSFET 600V 18.5A TO-3PN

N Channel 600 V 380 mO 300 W QFET Mosfet Flange Mount - TO-3PN

Trans MOSFET N-CH 600V 18.5A 3-Pin(3+Tab) TO-3P(N) Rail

MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:18.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):380mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:18.5A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:74A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.