供应链
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.40.80.00
Introduction Date2004-04-28
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
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ISOCOM SFH617A-2X Transistor Output Optocoupler, 1 Channel, 5.3 kV, 63 %, 50 mA, DIP, 4 Pins
描述
由其分销商提供的 onsemi FOD817B 的描述。
Phototransistor Optocoupler Transistor Output Optocoupler, 1-Element, 5000V Isolation
OPTOISOLATOR 5KV TRANSISTOR 4SMD / Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP Black Box
DIP4 Through Hole Single Channel 70 V 5000 Vrms Phototransistor Optocoupler
Transistor Output Optocoupler, 1, 5 Kv, 130 %, 50 Ma, Dip, 4 Rohs Compliant: Yes |Onsemi FOD817B.
4-DIP (0.300 7.62mm) 1 DC Active Optoisolator Transistor Output 260% @ 5mA 5000Vrms 50mA -55C~110C
OPTOCOUPLER, PHOTOTRANSITOR, 5KV; No. of Channels: 1 Channel; Optocoupler Case Style: DIP; No. of Pins: 4Pins; Forward Current If Max: 50mA; Isolation Voltage: 5kV; CTR Min: 130%; Collector Emitter Voltage V(br)ceo: 70V; Produc
The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDIP
Contact PlatingTin
MountThrough Hole
Number of Pins4
Weight408 mg
Technical
Collector Emitter Breakdown Voltage70 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)70 V
Current Transfer Ratio130 %
Dark Current100 nA
Fall Time18 µs
Forward Current50 mA
Forward Voltage1.4 V
Input Current20 mA
Isolation Voltage5000 Vrms
Max Collector Current50 mA
Max Input Current50 mA
Max Junction Temperature (Tj)125 °C
Max Operating Temperature110 °C
Max Output Voltage70 V
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Circuits1
Number of Elements1
Output Current per Channel50 mA
Output Voltage6 V
Power Dissipation200 mW
Reverse Breakdown Voltage6 V
Reverse Voltage6 V
Rise Time18 µs
Schedule B8541408000
Dimensions
Height4.4 mm
Length6.35 mm
Width6.35 mm