价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | FOD814A300 | 4,903 | 200 | Tube | ||||||||
| DigiKey | FOD814A300-ND | 1,458 | 1 | Tube | ||||||||
| Newark | FOD814A300 | 0 | 2K | |||||||||
| Onlinecomponents.com | FOD814A300 | 0 | 250 | Bulk | ||||||||
| Avnet | FOD814A300 | 0 | 8K | 2d |
供应链
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.40.80.00
Introduction Date2005-11-23
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi FOD814A300 的描述。
AC Input-Transistor Output Optocoupler, 1-Element, 5000V Isolation
70V 5000V 50mA 0.1V@1mA,20mA 1 1.2V AC.DC PDIP-4 Optocouplers - Phototransistor Output ROHS
No. Of Channels:1 Channel; Optocoupler Case Style:dip; No. Of Pins:4Pins; Forward Current If Max:50Ma; Isolation Voltage:5Kv; Ctr Min:50%; Collector Emitter Voltage V(Br)Ceo:70V; Product Range:-; Input Current:50Ma Rohs Compliant: Yes
The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDIP
MountThrough Hole
Number of Pins4
Weight408 mg
Technical
Collector Emitter Breakdown Voltage70 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)200 mV
Current Transfer Ratio50 %
Dark Current100 nA
Fall Time18 µs
Forward Current50 mA
Forward Voltage1.4 V
Input Current50 mA
Isolation Voltage5000 Vrms
Max Collector Current50 mA
Max Input Current50 mA
Max Operating Temperature105 °C
Max Output Voltage70 V
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Circuits1
Number of Elements1
Output Current per Channel50 mA
Output Voltage70 V
PackagingBox
Power Dissipation200 mW
Rise Time18 µs