供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2011-04-26
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2020-01-16
LTD Date2020-07-16
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
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描述
由其分销商提供的 onsemi FMBS2383 的描述。
Small Signal Bipolar Transistor, 0.8A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, MO-193AA
Trans GP BJT NPN 160V 0.8A 630mW 6-Pin TSOT-23 T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Collector Base Voltage (VCBO)160 V
Collector Emitter Breakdown Voltage160 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)160 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency120 MHz
hFE Min80
Max Breakdown Voltage160 V
Max Collector Current800 mA
Max Frequency120 MHz
Max Operating Temperature150 °C
Max Power Dissipation630 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel
PolarityNPN
Power Dissipation630 mW
Transition Frequency120 MHz
Dimensions
Height1 mm
Length3 mm
Width1.7 mm