onsemi FJY3002R

Name: onsemi FJY3002R
Brand: onsemi
SKU: FJY3002R

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

$ 0.034

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

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查看所有价格优惠

Distributor		SKU		Min	Pkg
Verical	2	FJY3002R	18,000	8798						0.038
Rochester Electronics		FJY3002R	682,353					0.041	0.034	0.030	16m
Flip Electronics		FJY3002R	4,550								6d
Farnell	2	FJY3002R	0	1	Cut Tape	0.027*	0.027*	0.027*	0.027*	0.027*	1d
element14 APAC	2	FJY3002R	0	1	Cut Tape	0.028*	0.028*	0.028*	0.028*	0.028*	14h

数据表和文档

下载 onsemi FJY3002R 的数据表和制造商文档。

IHS

Datasheet5 页12 年前

Datasheet0 页0 年前

element14 APAC

onsemi

Farnell

Newark

库存历史记录

3 个月趋势:

+0.00%

CAD 模型

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来源	eCAD	mCAD	文件
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供应链

Country of OriginSouth Korea

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2007-01-09

Lifecycle StatusObsolete (Last Updated: 3 days ago)

LTB Date2020-01-16

LTD Date2020-07-16

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

描述

由其分销商提供的 onsemi FJY3002R 的描述。

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

IHS

NPN Epitaxial Silicon Transistor with Bias Resistor

onsemi

Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SOT-523FL T/R

Verical

FAIRCHILD SEMICONDUCTOR FJY3002R Bipolar (BJT) Single Transistor, NPN, 50 V, 250 MHz, 200 mW, 100 mA, 30 hFE

Fly-Wing Technology

Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.

Fairchild Semiconductor

TRANSISTOR, DIGITAL NPN SOT-523F; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:30; Transistor Case Style:SOT-523; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:300mV; Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:250MHz; Hfe Min:30; Package / Case:SOT-523F; Power Dissipation Pd:200mW; Termination Type:SMD; Transistor Type:Bias Resistor (BRT); Voltage Vcbo:50V; Voltage Vi on:3V

element14 APAC