价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | FJV4114RMTF | 2,892 | 1h | |||||||||
| Flip Electronics | FJV4114RMTF | 72,880 | 6d | |||||||||
| Avnet | FJV4114RMTF | 0 | 25K | 4d | ||||||||
| Win Source | WS-FJV4114RMTF | 27,000 | 1310 | 1h | ||||||||
| Worldway Electronics | FJV4114RMTF | 7,957 | 7 | Tape & Reel | 1h |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2002-08-29
Lifecycle StatusObsolete (Last Updated: 2 days ago)
LTB Date2020-01-16
LTD Date2020-07-16
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
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描述
由其分销商提供的 onsemi FJV4114RMTF 的描述。
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Trans Digital BJT PNP 50V 100mA 3-Pin SOT-23 T/R
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NPN Epitaxial Silicon Transistor. ONSSPCTRNSTVU6M5P;
Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
Product Highlights: Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7KW, R2=47KW) Complement to FJV3114R
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current-100 mA
Current Rating-100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)10 V
hFE Min68
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation200 mW
Transition Frequency200 MHz
Voltage Rating (DC)-50 V