供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-11-06
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
onsemiFJD5304DTF
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
描述
由其分销商提供的 onsemi FJD5553TM 的描述。
Power Bipolar Transistor, 3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
400V 1.25W 3A 30@400mA3V 230mV@1A200mA NPN +150¡Í@(Tj) D-PAK Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 400V 3A 1250mW 3-Pin(2+Tab) DPAK T/R
High Voltage Fast Switching Transistor
POWER BIPOLAR TRANSISTOR, 3A, 40
onsemi NPN, DPAK (TO-252), , 3 A, -400 V
High Voltage Switch Mode Application
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Collector Base Voltage (VCBO)1.05 kV
Collector Emitter Breakdown Voltage400 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)400 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)14 V
hFE Min30
Max Breakdown Voltage400 V
Max Collector Current3 A
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation1.25 W
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm