供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-05-25
Lifecycle StatusObsolete (Last Updated: 1 month ago)
描述
由其分销商提供的 onsemi FGPF4533 的描述。
Trans IGBT Chip N-CH 330V 0.2A 3-Pin(3+Tab) TO-220F Tube
330V, PDP IGBT | IGBT 330V 28.4W TO220-3FP
RAIL/330V 50A 4th Gen PDP IGBT
Insulated Gate Bipolar Transistor, 330V V(BR)CES, N-Channel
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Using novel trench IGBT technology, Fairchild’s new series of trench IGBTs offer the optimum performance for consumer appliances, PDP TV and lighting applications where low conduction and switching losses are essential.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Collector Emitter Breakdown Voltage330 V
Collector Emitter Saturation Voltage1.8 V
Collector Emitter Voltage (VCEO)330 V
Continuous Collector Current200 A
Element ConfigurationSingle
Max Collector Current50 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation28.4 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation28.4 W
Turn-Off Delay Time40 ns
Turn-On Delay Time6 ns
Dimensions
Height19.4 mm