onsemi FGL60N100BNTD

Name: onsemi FGL60N100BNTD
Brand: onsemi
SKU: FGL60N100BNTD

IGBT 1000V 60A 180W TO264 / Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube

Obsolete

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价格与库存

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Distributor	SKU		Min	Pkg
Farnell	FGL60N100BNTD.	0	1		4.250*	4.170*	4.076*	3.996*	3.996*	5h
element14 APAC	FGL60N100BNTD.	0	1		7.888*	5.271*	4.217*	3.889*	3.889*	38m
Win Source	WS-FGL60N100BNTD	2,055	6			11.174	7.449	7.449	7.449	6h
Worldway Electronics	FGL60N100BNTD	11,627	7	Tube		4.869	4.638	4.638	4.638	5h
IC Components Ltd.	FGL60N100BNTD	5,178			9.200	9.200	9.200	9.200	9.200	1d

数据表和文档

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Upverter

Technical Drawing1 页6 年前

Newark

IHS

onsemi

Fairchild Semiconductor

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-03-17

Lifecycle StatusObsolete (Last Updated: 3 days ago)

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

描述

由其分销商提供的 onsemi FGL60N100BNTD 的描述。

IGBT 1000V 60A 180W TO264 / Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube

Win Source

FGL60N100 Series 1000 V 60 A Through Hole NPT Trench IGBT - TO-264-3L

Future Electronics

TRANSISTOR,IGBT,N-CHAN+DIODE,1kV V(BR)CES,60A I(C),TO-264

Newark

IGBT, NPT, TO-264; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):2.9V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1kV; Transistor Case Style:TO-264; No. of Pins:3Pins; Operatin

element14 APAC

Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.

Fairchild Semiconductor

IGBT, NPT, TO-264; Transistor Type:IGBT; Transistor Polarity:NPN; Voltage, Vces:1000V; Current Ic Continuous a Max:60A; Voltage, Vce Sat Max:2.9V; Power Dissipation:180W; Case Style:TO-264; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:1000V; Current Ic @ Vce Sat:60A; Current, Icm Pulsed:120A; Power, Pd:180W; Time, Rise:320ns

Farnell

Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( I-H ) applications Product Highlights: High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode

North Star Micro