供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-12-16
Lifecycle StatusObsolete (Last Updated: 6 days ago)
LTB Date2021-07-29
LTD Date2022-01-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)
描述
由其分销商提供的 onsemi FGL12040WD 的描述。
Trans IGBT Chip N-CH 1200V 80A 391000mW 3-Pin(3+Tab) TO-264 Tube
IGBT, 1200 V, 40 A Field Stop Trench
IGBT TRENCH/FS 1200V 80A TO264-3 / IGBT Trench Field Stop 1200 V 80 A 391 W Through Hole TO-264-3
IGBT Transistors 1200V 40A Field Stop Trench IGBT
1200V 40A FS2 Trench IGBT - 3LD
IGBT TRENCH/FS 1200V 80A TO264-3
Insulated Gate Bipolar Transistor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for welder applications where low conduction and switching losses are essential.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountThrough Hole
Number of Terminals3
Weight6.756 g
Technical
Collector Emitter Saturation Voltage2.9 V
Collector Emitter Voltage (VCEO)1.2 kV
Max Collector Current80 A
Max Operating Temperature150 °C
Max Power Dissipation391 W
Min Operating Temperature-55 °C
Number of Elements1
Schedule B8541290080