供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2015-06-02
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-07-29
LTD Date2022-01-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
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描述
由其分销商提供的 onsemi FGA6530WDF 的描述。
FGA6530WDF for FS3 650V SHD prolferation - 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED
Trans IGBT Chip N-CH 650V 60A 176000mW 3-Pin(3+Tab) TO-3P Tube
IGBT, 650 V, 30 A Field Stop Trench
IGBT 650V 30A FIELD STOP TO3PN
Insulated Gate Bipolar Transistor
176W 1.8V 650V 60A TO-3PN 18.9mm
FAST & ULTRAFAST RECOVERY RECTIFIERS;
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance only for welder application where low conduction and switching losses are essential.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage2.3 V
Collector Emitter Voltage (VCEO)650 V
Element ConfigurationSingle
Max Collector Current60 A
Max Operating Temperature175 °C
Max Power Dissipation176 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time81 ns