描述
由其分销商提供的 onsemi FGA20S120M 的描述。
Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-3P(N) Rail
1200V, 20A, Shorted-anode IGBT
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel
IGBT TRENCH FS 1200V 40A TO-3P
IGBT,N CH,1200V,40A,TO3PN; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:348W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:348W
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage1.55 V
Collector Emitter Voltage (VCEO)1.2 kV
Element ConfigurationSingle
Fall Time480 ns
Max Collector Current40 A
Max Operating Temperature175 °C
Max Power Dissipation348 W
Min Operating Temperature-55 °C
Number of Elements1
Dimensions
Height20.1 mm
Length15.8 mm
Width5 mm