供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-07-25
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
相关零件
InfineonIRLML6402TRPBF
Transistor: P-MOSFET; unipolar; -20V; -2.3A; 0.065ohm; 1.3W; -55+150 deg.C; SMD; SOT23
描述
由其分销商提供的 onsemi FDZ191P 的描述。
P-Channel PowerTrench® WL-CSP MOSFET, 1.5V Specified, -20V, -1A, 85mΩ
Power MOSFET, P Channel, 20 V, 3 A, 85 Milliohms, WLCSP, 6 Pins, Surface Mount
; Transistor Type:MOSFET; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
MOSFETs -20V P-Channel 1.5V PwrTrh WL-CSP MOSFET
Small Signal Field-Effect Transistor, 3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET P-CH 20V 3A 6-Pin WLCSP T/R
Avnet Japan
Pch 1.5V powertrench WLCSP mosfet
Designed on Fairchild's advanced 1.5V PowerTrench process with state of the art "low pitch" WLCSP packaging process, the FDZ191P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on). .
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Contact PlatingCopper, Silver, Tin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight54 mg
Technical
Continuous Drain Current (ID)3 A
Current Rating-3 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance800 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation900 mW
Rds On Max85 mΩ
Resistance85 MΩ
Rise Time10 ns
Threshold Voltage600 mV
Turn-Off Delay Time50 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)-20 V
Dimensions
Height600 µm
Length1.5 mm
Width1 mm