onsemi FDS6984AS

MOSFET Transistor, Dual N Channel + Schottky, 8.5 A, 30 V, 0.017 ohm, 10 V, 1.7 V
$ 0.476
Obsolete

价格与库存

数据表和文档

下载 onsemi FDS6984AS 的数据表和制造商文档。

IHS

Datasheet9 页20 年前
Datasheet0 页0 年前

onsemi

element14 APAC

Fairchild Semiconductor

Farnell

库存历史记录

3 个月趋势:
+0.00%

CAD 模型

从我们值得信赖的合作伙伴处下载 onsemi FDS6984AS 符号、封装和 3D STEP 模型。

来源eCADmCAD文件
SnapEDA
封装
3D下载
下载 CAD 模型时,合作伙伴网站将在新标签页中打开
从 Octopart 下载 CAD 模型,即表示您同意我们的条款和条件以及隐私政策

供应链

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-07-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-02-17
LTD Date2021-08-17
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

相关零件

InfineonIRF8313TRPBF
Transistor MOSFET Array Dual N-CH 30V 9.7A 8-Pin SOIC T/R
InfineonIRF8313PBF
Single N-Channel 30 V 2 W 6 nC Hexfet Power Mosfet Surface Mount - SOIC-8
onsemiFDS8882
N-Channel 30 V 20 mO Surface Mount PowerTrench® Mosfet - SOIC-8
onsemiFDFS6N303
Tape & Reel (TR) Surface Mount N-Channel MOSFET (Metal Oxide) Mosfet Transistor 6A Ta 6A 2W 6ns
onsemiFDS6986AS
Transistor MOSFET Array Dual N-CH 30V 6.5A/7.9A 8-Pin SOIC T/R
InfineonIRF7907PBF
MOSFET, Power;N-Ch;VDSS 30V;ID 9.1 A (Control FET), 11 A (Synchronous FET);SO-8

描述

由其分销商提供的 onsemi FDS6984AS 的描述。

MOSFET Transistor, Dual N Channel + Schottky, 8.5 A, 30 V, 0.017 ohm, 10 V, 1.7 V
Transistor MOSFET Array Dual N-CH 30V 5.5A/8.5A 8-Pin SOIC T/R
Dual N-Channel 30 V 32 mOhm 2 W Power Trench Mosfet - SOIC-8
MOSFET, DUAL N CH, 30V, 8.5A, SOIC-8; Transistor Polarity: Dual N Channel + Schottky; Continuous Drain Current Id: 8.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.017ohm; Rds(on) Test Voltage Vgs: 10V; Threshold
The FDS6984AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6984AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency.The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes a patented combination of a MOSFET monolithically integrated with a Schottky diode.

制造商别名

onsemi 在全球拥有多个品牌,分销商可将其用作替代名称。onsemi 也可称为以下名称:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd