onsemi FDS6984AS

MOSFET Transistor, Dual N Channel + Schottky, 8.5 A, 30 V, 0.017 ohm, 10 V, 1.7 V

Transistor MOSFET Array Dual N-CH 30V 5.5A/8.5A 8-Pin SOIC T/R

Dual N-Channel 30 V 32 mOhm 2 W Power Trench Mosfet - SOIC-8

MOSFET, DUAL N CH, 30V, 8.5A, SOIC-8; Transistor Polarity: Dual N Channel + Schottky; Continuous Drain Current Id: 8.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.017ohm; Rds(on) Test Voltage Vgs: 10V; Threshold

The FDS6984AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6984AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency.The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes a patented combination of a MOSFET monolithically integrated with a Schottky diode.