onsemi FDS4501H

Name: onsemi FDS4501H
Brand: onsemi
SKU: FDS4501H

N/P-Channel 30/20V 18/46mOhm Complementary PowerTrench Half-Bridge Mosfet SOIC-8

$ 0.631

EOL

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet		FDS4501H	7,500	2K						0.435	2d
Verical	4	FDS4501H	1,690	371					0.840	0.749
Rochester Electronics		FDS4501H	37,590					0.810	0.672	0.599	20h
DigiKey	2	FDS4501HFSCT-ND	4,926	1	Cut Tape	1.910	1.214	0.815	0.589	0.589
Flip Electronics		FDS4501H	7,500								1d

数据表和文档

下载 onsemi FDS4501H 的数据表和制造商文档。

IHS

Datasheet8 页24 年前

Newark

Future Electronics

onsemi

Farnell

库存历史记录

3 个月趋势:

-8.78%

供应链

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-06-21

Lifecycle StatusEOL (Last Updated: 5 days ago)

LTB Date2022-01-08

LTD Date2022-07-08

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)

描述

由其分销商提供的 onsemi FDS4501H 的描述。

N/P-Channel 30/20V 18/46mOhm Complementary PowerTrench Half-Bridge Mosfet SOIC-8

Future Electronics

Small Signal Field-Effect Transistor, 9.3A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

2.5W ¡À20 @ N Channel,¡À8 @ P Channel 3V@ 250¦ÌA 27nC@ 4.5V 2N+2P 30V,20V 18m¦¸@ 9.3A,10V 9.3A,5.6A 1.958nF@10V SOIC-8 4.9mm*3.9mm*1.75mm

UnikeyIC

MOSFET, NP CH, 30V/20V, 8SOIC; Transistor Polarity:N and P Complement; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2011)

element14 APAC

This complementary MOSFET half-bridge device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Fairchild Semiconductor