供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-03-13
Lifecycle StatusEOL (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
相关零件
onsemiFQPF44N08T
41W(Tc) 4V@ 250µA 50nC@ 10V 1individualNChannel 80V 34mΩ@ 12.5A,10V 1.43pF@25V TO-220F Through hole mounting
InfineonSPP15P10PGHKSA1
MOSFET P-CH 100V 15A TO220-3 P-Channel 100 V 15A (Tc) 128W (Tc) Through Hole PG-TO220-3
描述
由其分销商提供的 onsemi FDPF3860T 的描述。
In a Pack of 10, N-Channel MOSFET, 20 A, 100 V, 3-Pin TO-220F ON Semiconductor FDPF3860T
N-Channel PowerTrench® MOSFET 100V, 20A, 38.2mΩ
Power Field-Effect Transistor, 20A I(D), 100V, 0.0382ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET, N CH, 100V, 20A, TO-220F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0291ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:33.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance38.2 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.8 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation33.8 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation33.8 W
Rds On Max38.2 mΩ
Resistance3.802 GΩ
Rise Time17 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time24 ns
Turn-On Delay Time15 ns
Dimensions
Height19.5 mm
Length10.36 mm
Width4.9 mm